Gas-Phase Synthesis and Control of Structure and Thickness of Graphene Layers on Copper Substrates

A. I. Rudskoy; T. S. Kol’tsova; T. V. Larionova; A. N. Smirnov; E. S. Vasil’eva; A. G. Nasibulin

doi:10.1007/s11041-016-9962-2

Gas-Phase Synthesis and Control of Structure and Thickness of Graphene Layers on Copper Substrates

作者: Rudskoy A.I.¹, Kol’tsova T.S.¹, Larionova T.V.¹, Smirnov A.N.², Vasil’eva E.S.³, Nasibulin A.G.³
隶属关系:
1. Peter the Great St. Petersburg Polytechnic University
2. Ioffe Physicotechnical Institute of the Russian Academy of Sciences
3. Skolkovo Institute of Science and Technology
期: 卷 58, 编号 1-2 (2016)
页面: 40-45
栏目: Article
URL: https://journal-vniispk.ru/0026-0673/article/view/235341
DOI: https://doi.org/10.1007/s11041-016-9962-2
ID: 235341

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详细

The process of formation of graphene layers on a copper substrate is studied as a function of the pressure in the growth chamber. It is shown that the graphene layers form by nucleation and growth of graphene nuclei that later combine into a continuous layer. Growth in the pressure is accompanied by thickening of the synthesized graphene, intensification of compressive stresses, and appearance of structure defects.