Gas-Phase Synthesis and Control of Structure and Thickness of Graphene Layers on Copper Substrates


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Abstract

The process of formation of graphene layers on a copper substrate is studied as a function of the pressure in the growth chamber. It is shown that the graphene layers form by nucleation and growth of graphene nuclei that later combine into a continuous layer. Growth in the pressure is accompanied by thickening of the synthesized graphene, intensification of compressive stresses, and appearance of structure defects.

About the authors

A. I. Rudskoy

Peter the Great St. Petersburg Polytechnic University

Email: annelet@yandex.ru
Russian Federation, St. Petersburg

T. S. Kol’tsova

Peter the Great St. Petersburg Polytechnic University

Author for correspondence.
Email: annelet@yandex.ru
Russian Federation, St. Petersburg

T. V. Larionova

Peter the Great St. Petersburg Polytechnic University

Email: annelet@yandex.ru
Russian Federation, St. Petersburg

A. N. Smirnov

Ioffe Physicotechnical Institute of the Russian Academy of Sciences

Email: annelet@yandex.ru
Russian Federation, St. Petersburg

E. S. Vasil’eva

Skolkovo Institute of Science and Technology

Email: annelet@yandex.ru
Russian Federation, Skolkovo, Moscow Region

A. G. Nasibulin

Skolkovo Institute of Science and Technology

Email: annelet@yandex.ru
Russian Federation, Skolkovo, Moscow Region

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