Gas-Phase Synthesis and Control of Structure and Thickness of Graphene Layers on Copper Substrates
- Authors: Rudskoy A.I.1, Kol’tsova T.S.1, Larionova T.V.1, Smirnov A.N.2, Vasil’eva E.S.3, Nasibulin A.G.3
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Physicotechnical Institute of the Russian Academy of Sciences
- Skolkovo Institute of Science and Technology
- Issue: Vol 58, No 1-2 (2016)
- Pages: 40-45
- Section: Article
- URL: https://journal-vniispk.ru/0026-0673/article/view/235341
- DOI: https://doi.org/10.1007/s11041-016-9962-2
- ID: 235341
Cite item
Abstract
The process of formation of graphene layers on a copper substrate is studied as a function of the pressure in the growth chamber. It is shown that the graphene layers form by nucleation and growth of graphene nuclei that later combine into a continuous layer. Growth in the pressure is accompanied by thickening of the synthesized graphene, intensification of compressive stresses, and appearance of structure defects.
About the authors
A. I. Rudskoy
Peter the Great St. Petersburg Polytechnic University
Email: annelet@yandex.ru
Russian Federation, St. Petersburg
T. S. Kol’tsova
Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: annelet@yandex.ru
Russian Federation, St. Petersburg
T. V. Larionova
Peter the Great St. Petersburg Polytechnic University
Email: annelet@yandex.ru
Russian Federation, St. Petersburg
A. N. Smirnov
Ioffe Physicotechnical Institute of the Russian Academy of Sciences
Email: annelet@yandex.ru
Russian Federation, St. Petersburg
E. S. Vasil’eva
Skolkovo Institute of Science and Technology
Email: annelet@yandex.ru
Russian Federation, Skolkovo, Moscow Region
A. G. Nasibulin
Skolkovo Institute of Science and Technology
Email: annelet@yandex.ru
Russian Federation, Skolkovo, Moscow Region
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