An Ab Initio Study of the Structural and Electronic Properties of the Low-Defect TiC(110) Surface Simulating Oxygen Adsorption after Exposure to Laser Plasma


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

An ab initio simulation of the adsorption of atomic oxygen on the low-defect titanium carbide (110) surface reconstructed by laser radiation was performed. The relaxed atomic structures of the (110) surface of the O/TixCy system with Ti and C vacancies observed during the thermal treatment were studied in terms of the density functional theory. DFT calculations of their structural, thermodynamic, and electronic properties were performed. The bond lengths and adsorption energies were determined for various reconstructions of the atomic structure of the O/TixCy(110) surface. The effects of the oxygen adatom on the band and electronic spectra of the O/TixCy(110) surface were studied. The effective charges on the titanium and carbon atoms surrounding the oxygen atom in various reconstructions were determined. The charge transfer from titanium to oxygen and carbon atoms was found, which is determined by the reconstruction of the local atomic and electronic structures and correlates with chemisorption processes. The potential mechanisms of laser nanostructuring of the titanium carbide surface were suggested.

About the authors

V. V. Ilyasov

Department of Physics

Email: dinhkhang307@gmail.com
Russian Federation, Rostov on Don, 344000

D. K. Pham

Department of Physics

Author for correspondence.
Email: dinhkhang307@gmail.com
Russian Federation, Rostov on Don, 344000

A. V. Ilyasov

Department of Physics

Email: dinhkhang307@gmail.com
Russian Federation, Rostov on Don, 344000

T. I. Grebenok

Department of Physics

Email: dinhkhang307@gmail.com
Russian Federation, Rostov on Don, 344000

Chuong V. Nguyen

Institute of Research and Development; Department of Materials Science and Engineering

Email: dinhkhang307@gmail.com
Viet Nam, Da Nang, 59000; Hanoi, 100000

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2017 Allerton Press, Inc.