电邮这篇文章 Absorption spectra of some radiation-doped A3B5 compounds
- 作者: Rashidova S.S.1
-
隶属关系:
- Institute of Physics of National Academy of Science of Azerbaijan
- 期: 卷 121, 编号 5 (2016)
- 页面: 710-712
- 栏目: Condensed-Matter Spectroscopy
- URL: https://journal-vniispk.ru/0030-400X/article/view/165113
- DOI: https://doi.org/10.1134/S0030400X16110175
- ID: 165113
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详细
Temperature dependences of the absorption coefficient in A3B5 crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 1017 electron/cm2 are studied. A low-lying Ev + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga1–xInxAs, InP, and InP〈Fe〉).
作者简介
Sh. Rashidova
Institute of Physics of National Academy of Science of Azerbaijan
编辑信件的主要联系方式.
Email: sh.sh.rashidova@gmail.com
阿塞拜疆, Baku, 1143
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