The theory of SERS on semiconductor and dielectric substrates
- 作者: Polubotko A.M.1, Chelibanov V.P.2
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隶属关系:
- Ioffe Physical Technical Institute
- State University of Information Technologies
- 期: 卷 122, 编号 6 (2017)
- 页面: 937-943
- 栏目: Condensed-Matter Spectroscopy
- URL: https://journal-vniispk.ru/0030-400X/article/view/165416
- DOI: https://doi.org/10.1134/S0030400X17060169
- ID: 165416
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详细
It is demonstrated that the reason for SERS on dielectric and semiconductor substrates is enhancement of the electric field in the regions of the tops of surface roughness with a very small radius or a very large curvature. The enhancement depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. It is indicated that the enhancement on dielectrics and semiconductors is weaker than on metals with the same modulus of the dielectric constant. The result obtained is confirmed by experimental data on the enhancement coefficients obtained for various semiconductor and dielectric substrates.
作者简介
A. Polubotko
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: alex.marina@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Chelibanov
State University of Information Technologies
Email: alex.marina@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
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