Configuration Resonance and Generation Rate of Surface Plasmon Polaritons Excited by Semiconductor Quantum Dots near a Metal Surface
- Авторлар: Gubin M.Y.1,2, Gladush M.G.1,3, Prokhorov A.V.2
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Мекемелер:
- Vladimir State University Named after A.G. and N.G. Stoletov
- Moscow State Pedagogical University
- Institute for Spectroscopy, Russian Academy of Sciences
- Шығарылым: Том 126, № 1 (2019)
- Беттер: 83-91
- Бөлім: Nanophotonics
- URL: https://journal-vniispk.ru/0030-400X/article/view/165920
- DOI: https://doi.org/10.1134/S0030400X19010065
- ID: 165920
Дәйексөз келтіру
Аннотация
We discuss particular features of generation of surface plasmon polaritons in a metal–dielectric planar interface that is coupled to semiconductor quantum dots by near-field interactions. As a model of working medium for performing numerical experiment, we use a gold metal surface onto which a polyethylene terephthalate film containing CdSe semiconductor spherical quantum dot is deposited. The problem of optimizing the radius of a quantum dot and its distance to a metal surface is solved for achieving the maximum transfer efficiency of the quantum dot energy for the generation of surface plasmon polaritons. Dispersion effects of the surface wave generation rate associated with deviations of the radius of quantum dots and their distance to the metal surface from the corresponding average values are taken into account.
Авторлар туралы
M. Gubin
Vladimir State University Named after A.G. and N.G. Stoletov; Moscow State Pedagogical University
Email: avprokhorov33@mail.ru
Ресей, Vladimir, 600000; Moscow, 119435
M. Gladush
Vladimir State University Named after A.G. and N.G. Stoletov; Institute for Spectroscopy, Russian Academy of Sciences
Email: avprokhorov33@mail.ru
Ресей, Vladimir, 600000; TroitskMoscow, 108840
A. Prokhorov
Moscow State Pedagogical University
Хат алмасуға жауапты Автор.
Email: avprokhorov33@mail.ru
Ресей, Moscow, 119435
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