Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure
- 作者: Guseinov A.G.1, Salmanov V.M.1, Mamedov R.M.1, Salmanova A.A.2, Akhmedova F.M.1
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隶属关系:
- Baku State University
- Azerbaijan State Oil and Industry University
- 期: 卷 126, 编号 5 (2019)
- 页面: 458-462
- 栏目: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/165978
- DOI: https://doi.org/10.1134/S0030400X19050102
- ID: 165978
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详细
GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.
作者简介
A. Guseinov
Baku State University
Email: vagif_salmanov@yahoo.com
阿塞拜疆, Baku, AZ1148
V. Salmanov
Baku State University
编辑信件的主要联系方式.
Email: vagif_salmanov@yahoo.com
阿塞拜疆, Baku, AZ1148
R. Mamedov
Baku State University
Email: vagif_salmanov@yahoo.com
阿塞拜疆, Baku, AZ1148
A. Salmanova
Azerbaijan State Oil and Industry University
Email: vagif_salmanov@yahoo.com
阿塞拜疆, Baku, AZ1010
F. Akhmedova
Baku State University
Email: vagif_salmanov@yahoo.com
阿塞拜疆, Baku, AZ1148
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