Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure
- Authors: Guseinov A.G.1, Salmanov V.M.1, Mamedov R.M.1, Salmanova A.A.2, Akhmedova F.M.1
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Affiliations:
- Baku State University
- Azerbaijan State Oil and Industry University
- Issue: Vol 126, No 5 (2019)
- Pages: 458-462
- Section: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/165978
- DOI: https://doi.org/10.1134/S0030400X19050102
- ID: 165978
Cite item
Abstract
GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.
About the authors
A. G. Guseinov
Baku State University
Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148
V. M. Salmanov
Baku State University
Author for correspondence.
Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148
R. M. Mamedov
Baku State University
Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148
A. A. Salmanova
Azerbaijan State Oil and Industry University
Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1010
F. M. Akhmedova
Baku State University
Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148
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