Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure


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Abstract

GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.

About the authors

A. G. Guseinov

Baku State University

Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148

V. M. Salmanov

Baku State University

Author for correspondence.
Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148

R. M. Mamedov

Baku State University

Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148

A. A. Salmanova

Azerbaijan State Oil and Industry University

Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1010

F. M. Akhmedova

Baku State University

Email: vagif_salmanov@yahoo.com
Azerbaijan, Baku, AZ1148

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