Email this article Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles
- Authors: Kosarev A.N.1,2,3, Chaldyshev V.V.1,2,4, Kondikov A.A.1,4, Vartanyan T.A.4, Toropov N.A.4, Gladskikh I.A.4, Gladskikh P.V.4, Akimov I.1,3, Bayer M.1,3, Preobrazhenskii V.V.5, Putyato M.A.5, Semyagin B.R.5
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Experimentelle Physik 2, Technische Universität Dortmund
- ITMO University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 126, No 5 (2019)
- Pages: 492-496
- Section: Optics of Low-Dimensional Structures, Mesostructures, and Metamaterials
- URL: https://journal-vniispk.ru/0030-400X/article/view/165984
- DOI: https://doi.org/10.1134/S0030400X19050151
- ID: 165984
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Abstract
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
About the authors
A. N. Kosarev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251; Dortmund, 44221
V. V. Chaldyshev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; ITMO University
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251; St. Petersburg, 197101
A. A. Kondikov
Ioffe Physical Technical Institute, Russian Academy of Sciences; ITMO University
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
T. A. Vartanyan
ITMO University
Author for correspondence.
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 197101
N. A. Toropov
ITMO University
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 197101
I. A. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 197101
P. V. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 197101
I. Akimov
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 194021; Dortmund, 44221
M. Bayer
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Russian Federation, St. Petersburg, 194021; Dortmund, 44221
V. V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Russian Federation, Novosibirsk, 630090
M. A. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Russian Federation, Novosibirsk, 630090
B. R. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Russian Federation, Novosibirsk, 630090
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