Optical Properties of Single-Crystal Germanium in the THz Range
- Авторлар: Kaplunov I.A.1, Kolesnikov A.I.1, Kropotov G.I.2, Rogalin V.E.1,3
-
Мекемелер:
- Tver State University
- Tydex Company
- National Center of Laser Systems and Integrated Units Astrofizika
- Шығарылым: Том 126, № 3 (2019)
- Беттер: 191-194
- Бөлім: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/165938
- DOI: https://doi.org/10.1134/S0030400X19030093
- ID: 165938
Дәйексөз келтіру
Аннотация
The transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm‒1, a value comparable with that for silicon. The free-carrier absorption cross sections of silicon and germanium are significantly different, which may be caused by the difference in the mechanisms of carrier–phonon interaction in these materials.
Авторлар туралы
I. Kaplunov
Tver State University
Email: grigorykropotov@tydex.ru
Ресей, Tver, 170100
A. Kolesnikov
Tver State University
Email: grigorykropotov@tydex.ru
Ресей, Tver, 170100
G. Kropotov
Tydex Company
Хат алмасуға жауапты Автор.
Email: grigorykropotov@tydex.ru
Ресей, St. Petersburg, 194292
V. Rogalin
Tver State University; National Center of Laser Systems and Integrated Units Astrofizika
Email: grigorykropotov@tydex.ru
Ресей, Tver, 170100; Moscow, 125424
Қосымша файлдар
