Optical Properties of Single-Crystal Germanium in the THz Range
- Авторы: Kaplunov I.A.1, Kolesnikov A.I.1, Kropotov G.I.2, Rogalin V.E.1,3
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Учреждения:
- Tver State University
- Tydex Company
- National Center of Laser Systems and Integrated Units Astrofizika
- Выпуск: Том 126, № 3 (2019)
- Страницы: 191-194
- Раздел: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/165938
- DOI: https://doi.org/10.1134/S0030400X19030093
- ID: 165938
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Аннотация
The transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm‒1, a value comparable with that for silicon. The free-carrier absorption cross sections of silicon and germanium are significantly different, which may be caused by the difference in the mechanisms of carrier–phonon interaction in these materials.
Об авторах
I. Kaplunov
Tver State University
Email: grigorykropotov@tydex.ru
Россия, Tver, 170100
A. Kolesnikov
Tver State University
Email: grigorykropotov@tydex.ru
Россия, Tver, 170100
G. Kropotov
Tydex Company
Автор, ответственный за переписку.
Email: grigorykropotov@tydex.ru
Россия, St. Petersburg, 194292
V. Rogalin
Tver State University; National Center of Laser Systems and Integrated Units Astrofizika
Email: grigorykropotov@tydex.ru
Россия, Tver, 170100; Moscow, 125424
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