Email this article Optical Properties of Single-Crystal Germanium in the THz Range
- Authors: Kaplunov I.A.1, Kolesnikov A.I.1, Kropotov G.I.2, Rogalin V.E.1,3
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Affiliations:
- Tver State University
- Tydex Company
- National Center of Laser Systems and Integrated Units Astrofizika
- Issue: Vol 126, No 3 (2019)
- Pages: 191-194
- Section: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/165938
- DOI: https://doi.org/10.1134/S0030400X19030093
- ID: 165938
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Abstract
The transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm‒1, a value comparable with that for silicon. The free-carrier absorption cross sections of silicon and germanium are significantly different, which may be caused by the difference in the mechanisms of carrier–phonon interaction in these materials.
About the authors
I. A. Kaplunov
Tver State University
Email: grigorykropotov@tydex.ru
Russian Federation, Tver, 170100
A. I. Kolesnikov
Tver State University
Email: grigorykropotov@tydex.ru
Russian Federation, Tver, 170100
G. I. Kropotov
Tydex Company
Author for correspondence.
Email: grigorykropotov@tydex.ru
Russian Federation, St. Petersburg, 194292
V. E. Rogalin
Tver State University; National Center of Laser Systems and Integrated Units Astrofizika
Email: grigorykropotov@tydex.ru
Russian Federation, Tver, 170100; Moscow, 125424
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