Influence of topological defects on the structure of G and D spectral bands of a single-layer carbon nanotube

Аннотация

A topological defect in a carbon nanotube grown by chemical vapor deposition from methane onto a silicon substrate with thermal oxide has been investigated and visualized (with a resolution of about 1.5 μm) by confocal Raman spectroscopy. Vibrational Raman spectra of molecular fragments of a single-wall carbon nanotube (SWCNT) without a defect and with Stone–Wales defects (two pentagonal and two heptagonal cells) are calculated. The influence of defects on the shape of G-band components (G⁺ and G^–), which makes it possible to determine the nanotube conductivity type, is considered.