Spin Valves with the Controlled Shift of Low-Field Hysteresis Loop and High-Sensitive Sensing Elements on Their Basis

Аннотация

Metallic multilayer spin-valve nanostructures that comprise the exchange-coupled ferromagnet/ Ru/ferromagnet structure in the free layer have been synthesized by magnetron sputtering. For microobjects (meanders) formed from CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta spin valves with different thicknesses of ruthenium and copper layers, the dependences of the magnetoresistive sensitivity and low-field hysteresis loop shift on the meander strip width have been studied. Sensing elements characterized by high magnetoresistive sensitivity have been manufactured.