Email this article Model of an Injection Semiconductor Quantum-Dot Laser
- Authors: Koryukin I.V.1
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Affiliations:
- Institute of Applied Physics of the Russian Academy of Sciences
- Issue: Vol 60, No 11 (2018)
- Pages: 889-896
- Section: Article
- URL: https://journal-vniispk.ru/0033-8443/article/view/243846
- DOI: https://doi.org/10.1007/s11141-018-9855-x
- ID: 243846
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Abstract
We propose an asymmetric electron–hole model of an injection semiconductor quantum-dot laser, which correctly allows for relaxation at transitions between the electron and hole levels. Steady-state solutions of the proposed model, conditions for the simultaneous operation at transitions between the ground and first excited state levels, and relaxation oscillations in the two-wave lasing regime are studied. It is shown that the model can be simplified when the relaxation between hole levels is much faster than the relaxation between electron levels.
About the authors
I. V. Koryukin
Institute of Applied Physics of the Russian Academy of Sciences
Author for correspondence.
Email: igor@appl.sci-nnov.ru
Russian Federation, Nizhny Novgorod
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