Development of Wireless Communication Systems in the Subterahertz Frequency Range
- Authors: Biryukov V.V.1, Vaks V.L.1,2, Kisilenko K.I.1, Panin A.N.1,2, Pripolzin S.I.1,2, Raevsky A.S.1, Shcherbakov V.1
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Affiliations:
- Nizhny Novgorod State Technical University n.a. R.E. Alekseev
- Institute for Physics of Microstructures of the Russian Academy of Sciences
- Issue: Vol 61, No 10 (2019)
- Pages: 763-772
- Section: Article
- URL: https://journal-vniispk.ru/0033-8443/article/view/243925
- DOI: https://doi.org/10.1007/s11141-019-09934-5
- ID: 243925
Cite item
Abstract
The subterahertz and terahertz frequency ranges are promising for the creation of high-speed wireless communication systems because of the possibility to achieve a bandwidth of about several dozen gigahertz, which ensures a high channel capacity. However, rapid attenuation of a signal during its propagation in the atmosphere complicates the operation of communication systems in these ranges. The use of fixed narrow-beam antennas with a high power gain provides a direct surface communication distance of up to a few kilometers. The communication distance limitation can be partially removed by decreasing the frequency down to 200 GHz and narrowing the channel bandwidth down to a few gigahertz. In this paper, we present a radically new approach that was developed to create a wideband (up to one gigahertz) communication channel based on rapid modulation of a centimeter wavelength signal followed by the carrier-frequency multiplication up to 230 GHz without the modulating-signal distortion. This approach was not used in the previous communication systems. The model of a transmit–receive system (200–220 GHz) based on modern semiconductor devices is described in detail. The possibility of digital signal transmission at a speed of up to 1 Gbit/s is experimentally shown. According to calculations, an output power of the transmitter about several hundreds of microwatt is enough for data transmission to a distance of up to 1.5 km with an antenna gain of no less than 50 dB.
About the authors
V. V. Biryukov
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod
V. L. Vaks
Nizhny Novgorod State Technical University n.a. R.E. Alekseev; Institute for Physics of Microstructures of the Russian Academy of Sciences
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod
K. I. Kisilenko
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod
A. N. Panin
Nizhny Novgorod State Technical University n.a. R.E. Alekseev; Institute for Physics of Microstructures of the Russian Academy of Sciences
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod
S. I. Pripolzin
Nizhny Novgorod State Technical University n.a. R.E. Alekseev; Institute for Physics of Microstructures of the Russian Academy of Sciences
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod
A. S. Raevsky
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Author for correspondence.
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod
V.V. Shcherbakov
Nizhny Novgorod State Technical University n.a. R.E. Alekseev
Email: raevsky@nntu.ru
Russian Federation, Nizhny Novgorod
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