Enviar artigo por via de e-mail The effect of laser radiation on a junction field-effect transistor
- Autores: Rekhviashvili S.S.1, Gaev D.S.2, Litvinov А.B.1
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Afiliações:
- KBSC RAS
- Kabardino-Balkarian State University named after Kh.M. Berbekov
- Edição: Volume 70, Nº 1 (2025)
- Páginas: 82-87
- Seção: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://journal-vniispk.ru/0033-8494/article/view/294332
- DOI: https://doi.org/10.31857/S0033849425010092
- EDN: https://elibrary.ru/HIWTEB
- ID: 294332
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Resumo
Experimental and theoretical studies of the effect of modulated laser radiation on the functioning of a junction field-effect transistor (JFET) as part of an amplifier stage with a common source have been carried out. Patterns in changes in transistor parameters depending on external radiation are determined. It has been established that the cut-off voltage and the specific steepness of the shutter undergo the greatest changes during laser irradiation. It was found that when the transistor structure is irradiated, a photovoltaic effect occurs at the p-n junction of the gate, the concentration of free charge carriers in the semiconductor regions and the channel resistance change. It is shown that the device is sufficiently resistant to laser radiation, which is crucial for creating radiation-resistant integrated circuits.
Sobre autores
S. Rekhviashvili
KBSC RAS
Autor responsável pela correspondência
Email: rsergo@mail.ru
Institute of Applied Mathematics and Automation
Rússia, 89A Shortanova St., Nalchik, 360000D. Gaev
Kabardino-Balkarian State University named after Kh.M. Berbekov
Email: rsergo@mail.ru
Rússia, 173 Chernyshevsky St., Nalchik, 360004
А. Litvinov
KBSC RAS
Email: rsergo@mail.ru
Institute of Applied Mathematics and Automation
Rússia, 89A Shortanova St., Nalchik, 360000Bibliografia
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