Phase equilibria in the BaS–Ga2S3 system

Abstract

In the BaS–Ga₂S₃ system, the following compounds form: congruently melting compound BaGa₄S₇ (rhombic system, space group Pmn2₁, a = 1.477 nm, b = 0.624 nm, c = 0.593 nm, and T_melt = 1490 K) and incongruently melting compounds BaGa₂S₄ (cubic system, space group Pa3, a = 1.2661 nm, and Tmelt = 1370 K), Ba₂Ga₂S₅ (monoclinic system, space group C2/c, a = 1.529, b = 1.479, c = 0.858 nm, ß = 106.04°, and T_melt = 1150 K), Ba₃Ga₂S₆ (monoclinic system, space group C2/c, a = 0.909 nm, b = 1.448 nm, c = 0.903 nm, ß = 91.81°, and T_melt = 1190 K), Ba₄Ga₂S₇ (monoclinic system, space group P2₁/m, a = 1.177 nm, b = 0.716 nm, c = 0.903 nm, ß = 108.32°, and T_melt = 1230 K), and Ba₅Ga₂S₈ (rhombic system, space group Cmca, a = 2.249 nm, b = 1.215 nm, c = 1.189 nm, and T_melt = 1480 K). The compositions of eutectics are 38 and 72 mol % Ga₂S₃, and their melting points are 1120 and 1160 K, respectively. The BaS solubility in γ-Ga₂S₃ at 1070 K reaches 3 mol %.