Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films

Abstract

The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300 ≤ Т, K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В₄С, В4С + В₂О₃, С + В₂О₃ + В₄С, С + В₂О₃, С + В₂О₃ + НВО₂, С + НВО₂, С + В₄С, and a В₄С phase.