Email this article Structure and Chemical Composition of Manganese-Doped GaSb Dislocations
- Authors: Sanygin V.P.1, Izotov A.D.1, Pashkova O.N.1
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Affiliations:
- Kurnakov Institute of General and Inorganic Chemistry
- Issue: Vol 63, No 9 (2018)
- Pages: 1149-1155
- Section: Synthesis and Properties of Inorganic Compounds
- URL: https://journal-vniispk.ru/0036-0236/article/view/168961
- DOI: https://doi.org/10.1134/S0036023618090152
- ID: 168961
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Abstract
Electron microscopic observations showed that the preparation of magnetic semiconductor GaSb〈Mn〉 by melt quenching is accompanied by discrete manganese precipitation on GaSb dislocations, this precipitation generating inclusions sized from a split micrometer to several micrometers. The chemical composition of microinclusions was determined by electron probe microanalysis. The superposition of the magnetic properties of compounds that are formed in the Mn–Sb system determines the magnetic properties of GaSb〈Mn〉.
About the authors
V. P. Sanygin
Kurnakov Institute of General and Inorganic Chemistry
Author for correspondence.
Email: sanygin@igic.ras.ru
Russian Federation, Moscow, 119991
A. D. Izotov
Kurnakov Institute of General and Inorganic Chemistry
Email: sanygin@igic.ras.ru
Russian Federation, Moscow, 119991
O. N. Pashkova
Kurnakov Institute of General and Inorganic Chemistry
Email: sanygin@igic.ras.ru
Russian Federation, Moscow, 119991
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