Influence of Impurities on the Stability of the Ti5Si3 and TiSi Phases

L. S.  Chumakova; Чумакова Л. С.; A. V. Bakulin; Бакулин А. В.; S. E. Kulkova; Кулькова С. Е.

doi:10.31857/S0207401X23070051

Influence of Impurities on the Stability of the Ti5Si3 and TiSi Phases

Авторлар: Chumakova L.S.¹, Bakulin A.V.¹, Kulkova S.E.¹^,2
Мекемелер:
1. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences
2. National Research Tomsk State University
Шығарылым: Том 42, № 7 (2023)
Беттер: 78-85
Бөлім: XXXIV СИМПОЗИУМ “СОВРЕМЕННАЯ ХИМИЧЕСКАЯ ФИЗИКА” (СЕНТЯБРЬ 2022 г., ТУАПСЕ)
URL: https://journal-vniispk.ru/0207-401X/article/view/139962
DOI: https://doi.org/10.31857/S0207401X23070051
EDN: https://elibrary.ru/YBMCSE
ID: 139962

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Аннотация
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Әдебиет тізімі
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Статистика

Аннотация

The total energies of a number of Ti–Si intermetallic phases are calculated by the projector augmented-wave method. It is shown that the formation enthalpies of Ti5Si3 and TiSi are almost equal. The peculiarities of the density of electronic states of the considered titanium silicides and its evolution with increasing silicon content are discussed. The formation energies of doped titanium silicides Ti5Si3 and TiSi are calculated depending on the position of the impurity on different sublattices. It is established that the elements of the 3d-period prefer to replace titanium in Ti5Si3, while the elements of the second half of the 3d‑period substitute silicon in TiSi. The effect of impurities on the relative stability of compounds is studied. It is shown that almost all the considered elements except Cu, Zn, Al, and Ga increase the stability of the Ti5Si3 phase with respect to TiSi. The obtained results agree with the available experimental data.

Негізгі сөздер

titanium silicides, phase stability, electronic structure, density functional theory

Әдебиет тізімі

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