Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication

T. A. Ismailov; T. É. Sarkarov; B. A. Shangereeva; A. R. Shakhmaeva

doi:10.1007/s10717-017-9954-8

Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication

Authors: Ismailov T.A.¹, Sarkarov T.É.¹, Shangereeva B.A.¹, Shakhmaeva A.R.¹
Affiliations:
1. Dagestan State Technical University
Issue: Vol 74, No 5-6 (2017)
Pages: 169-171
Section: Coatings
URL: https://journal-vniispk.ru/0361-7610/article/view/244823
DOI: https://doi.org/10.1007/s10717-017-9954-8
ID: 244823

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Abstract

Different methods are proposed for protecting the surfaces of silicon substrates in the fabrication of silicon transistors. The results of thermal operations with technological regimes for obtaining a low-melting glassy layer in order to protect the surface of p – n junction substrates from different external actions are presented.