Surface emitting quantum-cascade lasers with a second-order grating and increased coupling coefficient

A. V. Babichev; Бабичев А. В.; N. A. Pikhtin; Пихтин Н. А.; I. I. Novikov; Новиков И. И.; L. Ya. Karachinsky; Карачинский Л. Я.; V. P. Evtikhiev; Евтихиев В. П.; A. V. Lyutetskii; Лютецкий А. В.; S. O. Slipchenko; Слипченко С. О.; M. I. Mitrofanov; Митрофанов М. И.; G. V. Voznyuk; Вознюк Г. В.; V. Yu. Panevin; Паневин В. Ю.; A. D. Petruk; Петрук А. Д.; N. Yu. Kharin; Харин Н. Ю.; A. G. Gladyshev; Гладышев А. Г.; E. S. Kolodeznyi; Колодезный Е. С.; A. Yu. Egorov; Егоров А. Ю.

doi:10.31857/S036767652370148X

Surface emitting quantum-cascade lasers with a second-order grating and increased coupling coefficient

Authors: Babichev A.V.¹, Pikhtin N.A.², Novikov I.I.¹, Karachinsky L.Y.¹, Evtikhiev V.P.¹^,2, Lyutetskii A.V.², Slipchenko S.O.², Mitrofanov M.I.²^,3, Voznyuk G.V.¹^,2, Panevin V.Y.⁴, Petruk A.D.⁴, Kharin N.Y.⁴, Gladyshev A.G.¹, Kolodeznyi E.S.¹, Egorov A.Y.⁵
Affiliations:
1. ITMO University
2. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
3. Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences
4. Peter the Great St. Petersburg Polytechnic University
5. Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Issue: Vol 87, No 6 (2023)
Pages: 855-860
Section: Articles
URL: https://journal-vniispk.ru/0367-6765/article/view/135409
DOI: https://doi.org/10.31857/S036767652370148X
EDN: https://elibrary.ru/VMALWG
ID: 135409

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Abstract
About the authors
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Abstract

The results of studying the characteristics of surface-emitting quantum-cascade ring lasers with a second-order grating are presented. The selection of etching receipt by ion beam lithography made it possible to increase the coupling coefficient to 12 cm^–1. Lasing close to 7.6 μm with a low threshold current density (about 0.3 kA/cm²) is demonstrated.

About the authors

A. V. Babichev

ITMO University

Author for correspondence.
Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg

N. A. Pikhtin

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg

I. I. Novikov

ITMO University

Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg

L. Ya. Karachinsky

ITMO University

Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg

V. P. Evtikhiev

ITMO University; Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg; Russia, 194021, Saint Petersburg

A. V. Lyutetskii

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg

S. O. Slipchenko

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg

M. I. Mitrofanov

Ioffe Physical-Technical Institute of the Russian Academy of Sciences; Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg; Russia, 194021, Saint Petersburg

G. V. Voznyuk

ITMO University; Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg; Russia, 194021, Saint Petersburg

V. Yu. Panevin

Peter the Great St. Petersburg Polytechnic University

Email: a.babichev@itmo.ru
Russia, 195251, Saint Petersburg

A. D. Petruk

Peter the Great St. Petersburg Polytechnic University

Email: a.babichev@itmo.ru
Russia, 195251, Saint Petersburg

N. Yu. Kharin

Peter the Great St. Petersburg Polytechnic University

Email: a.babichev@itmo.ru
Russia, 195251, Saint Petersburg

A. G. Gladyshev

ITMO University

Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg

E. S. Kolodeznyi

ITMO University

Email: a.babichev@itmo.ru
Russia, 197101, Saint Petersburg

A. Yu. Egorov

Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences

Email: a.babichev@itmo.ru
Russia, 194021, Saint Petersburg

References

Harrer A., Szedlak R., Schwarz B. et al. // Sci. Reports. 2016. V. 6. No. 1. Art. No. 21795.
Szedlak R., Hayden J., Martín-Mateos P. et al. // Opt. Engin. 2018. V. 57. No. 1. Art. No. 011005.
Tütüncü E., Kokoric V., Szedlak R. et al. // Analyst. 2016. V. 141. No. 22. P. 6202.
Szedlak R., Harrer A., Holzbauer M. et al. // ACS Photonics. 2016. V. 3. No. 10. P. 1794.
Hinkov B., Pilat F., Lux L. et al. // Nature Commun. 2022. V. 13. No. 1. Art. No. 4753.
Wu D.H., Razeghi M. // APL Materials. 2017. V. 5. No. 3. Art. No. 035505.
Mujagić E., Hoffmann L.K., Schartner S. et al. // Proc. SPIE. 2009. V. 7230. Art. No. 723015.
Mujagić E., Hoffmann L.K., Schartner S. et al. // Proc. CLEO/QELS 2009 (Baltimore, 2009) Art. No. CThT4.
Schwarze C., Szedlak R., Ahn S.I. et al. // Appl. Phys. Lett. 2013. V. 103. No. 8. Art. No. 081101.
Szedlak R., Schwarzer C., Zederbauer T. et al. // Opt. Express. 2014. V. 22. No. 13. P. 15829.
Szedlak R., Holzbauer M., MacFarland D. et al. // Sci. Reports. 2015. V. 5. Art. No. 16668.
Piccardo M., Schwarz B., Kazakov D. et al. // Nature. 2020. V. 582. No. 7812. P. 360.
Schwarzer C., Mujagić E., Yao Y. et al. // Appl. Phys. Lett. 2010. V. 97. No. 7. Art. No. 071103.
Holzbauer M., Szedlak R., Detz H. et al. // Appl. Phys. Lett. 2017. V. 111. No. 17. Art. No. 171101.
Knötig H., Hinkov B., Weih R. et al. // Appl. Phys. Lett. 2020. V. 116. No. 13. Art. No. 131101.
Bai Y., Tsao S., Bandyopadhyay N. et al. // Appl. Phys. Lett. 2011. V. 99. No. 26. Art. No. 261104.
Бабичев А.В., Гладышев А.Г., Дюделев В.В. и др. // Письма в ЖТФ. 2020. Т. 46. № 9. С. 35; Babichev A.V., Gladyshev A.G., Dudelev V.V. et al. // Tech. Phys. Lett. 2020. V. 46. No. 5. P. 442.
Дюделев В.В., Михайлов Д.А., Бабичев А.В. и др. // Квант. электрон. 2020. Т. 50. № 11. С. 989; Dudelev V.V., Mikhailov D.A., Babichev A.V. et al. // Quant. Electron. 2020. V. 50. No. 11. P. 989.
Lyakh A., Maulini R., Tsekoun A. et al. // Opt. Express. 2012. V. 20. No. 22. P. 24272.
Бабичев А.В., Гладышев А.Г., Курочкин А.С. и др. // Письма в ЖТФ. 2019. Т. 45. № 8. С. 31; Babichev A.V., Gladyshev A.G., Kurochkin A.S. et al. // Tech. Phys. Lett. 2019. V. 45. No. 4. P. 398.
Brandstetter M., Genner A., Schwarzer C. et al. // Opt. Express. 2014. V. 22. No. 3. P. 2656.
Mujagić E., Schwarzer C., Yao Y. et al. // Appl. Phys. Lett. 2011. V. 98. No. 14. Art. No. 141101.
Бабичев А.В., Михайлов Д.А., Колодезный Е.С. и др. // ФТП. 2022. Т. 56. № 9. С. 908; Babichev A.V., Mikhailov D.A., Kolodeznyi E.S. et al. // Semiconductors. 2022. V. 56. No. 9. P. 689.
Bai Y., Slivken S., Kuboya S. et al. // Nature Photonics. 2010. V. 4. No. 2. P. 99.
Gmachl C., Tredicucci A., Capasso F. et al. // Appl. Phys. Lett. 1998. V. 72. No. 24. P. 3130.
Бабичев А.В., Пашнев Д.А., Гладышев А.Г. и др. // Опт. и спектроск. 2020. Т. 128. № 8. С. 1165; Babichev A.V., Pashnev D.A., Gladyshev A.G. et al. // Opt. Spectrosс. 2020. V. 128. No. 8. P. 1187.
Faist J., Gmachl C., Striccoli M. et al. // Appl. Phys. Lett. 1996. V. 69. No. 17. P. 2456.
Бабичев А.В., Колодезный Е.С., Гладышев А.Г. и др. // Письма в ЖТФ. 2022. Т. 48. № 5. С. 7; Babichev A.V., Kolodeznyi E.S., Gladyshev A.G. et al. // Tech. Phys. Lett. 2022. V. 48. No. 3. P. 6.