Email this article GaN/AlGaN resonant Bragg structure
- Authors: Ivanov A.A.1, Chaldyshev V.V.1, Zavarin E.E.1, Sakharov A.V.1, Lundin W.V.1, Tsatsulnikov A.F.2
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Affiliations:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Submicron Heterostructures for Microelectronics Research & Engineering Center of the Russian Academy of Sciences
- Issue: Vol 87, No 6 (2023)
- Pages: 892-895
- Section: Articles
- URL: https://journal-vniispk.ru/0367-6765/article/view/135415
- DOI: https://doi.org/10.31857/S0367676523701545
- EDN: https://elibrary.ru/VNGBLG
- ID: 135415
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Abstract
Reflection spectra from a resonant Bragg structure with 30 GaN/AlGaN quantum wells have been measured at room temperature. Numerical modeling using the method of transfer matrices gave a quantitatively accurate fit of the experimental results. Defined radiative and non-radiative broadening parameters of the exciton in GaN/AlGaN quantum wells.
About the authors
A. A. Ivanov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
V. V. Chaldyshev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Author for correspondence.
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
E. E. Zavarin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
A. V. Sakharov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
W. V. Lundin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
A. F. Tsatsulnikov
Submicron Heterostructures for Microelectronics Research & Engineering Centerof the Russian Academy of Sciences
Email: chald.gvg@mail.ioffe.ru
Russia, 194021, Saint Petersburg
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