Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiN  x  /La: HfO 2  (Hf 0.5 Zr 0.5 O)/TiN  x  /SiO 2

E. I. Suvorova; Суворова Е. И.; O. V. Uvarov; Уваров О. В.; A. A. Klimenko; Клименко А. А.; K. V. Chizh; Чиж К. В.

doi:10.31857/S0367676523702502

Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiN_x/La: HfO₂ (Hf_0.5Zr_0.5O)/TiN_x/SiO₂

Autores: Suvorova E.I.¹, Uvarov O.V.², Klimenko A.A.³, Chizh K.V.²^,3
Afiliações:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences
2. Prokhorov General Physics Institute of Russian Academy of Sciences
3. Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
Edição: Volume 87, Nº 10 (2023)
Páginas: 1434-1440
Seção: Articles
URL: https://journal-vniispk.ru/0367-6765/article/view/141839
DOI: https://doi.org/10.31857/S0367676523702502
EDN: https://elibrary.ru/DGTUPE
ID: 141839

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Resumo

The structure and properties of TiN_x electrodes obtained by plasma-enhanced atomic layer deposition in the 20 nm TiN_x/10 nm La: HfO₂(Hf_0.5Zr_0.5O)/20 nm TiN_x/1 μm SiO₂ system have been studied by electron microscopy and electron energy loss spectroscopy. It is shown that the electrode material has a TiN_xO_y composition, the band gap width varies within 1.7–2.5 eV, the resistivity is 208 μOm cm and the value of the temperature coefficient of resistance (20–100°C) is equal to –31.4 ⋅ 10^–6 1/K.

Bibliografia

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