Photon detectors and emitters for quantum communication systems and quantum frequency standards
- Authors: Preobrazhenskii V.V.1, Chistokhin I.B.1, Ryabtsev I.I.1, Haisler V.A.1, Toropov A.I.1
-
Affiliations:
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Issue: Vol 88, No 9 (2024)
- Pages: 1466–1472
- Section: Quantum Optics and Quantum Technologies
- URL: https://journal-vniispk.ru/0367-6765/article/view/283430
- DOI: https://doi.org/10.31857/S0367676524090193
- EDN: https://elibrary.ru/OCSNMK
- ID: 283430
Cite item
Abstract
We presented a brief overview of the results obtained at the Rzhanov Institute of Semiconductor Physics of SB RAS in the field of the development of photon detectors and emitters promising for use in quantum cryptography systems and miniature quantum frequency standards based on the effect of coherent population trapping.
Full Text

About the authors
V. V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Author for correspondence.
Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk
I. B. Chistokhin
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk
I. I. Ryabtsev
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk
V. A. Haisler
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk
A. I. Toropov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: pvv@isp.nsc.ru
Russian Federation, Novosibirsk
References
- Wooters W.K., Zurek W.H. // Nature. 1982. V. 299. P. 802.
- Рябцев И.И., Третьяков Д.Б., Коляко А.В. и др. // Изв. РАН. Сер. физ. 2017. Т. 81. № 12. С. 1689; Ryabtsev I.I., Tretyakov D.B., Kolyako A.V. et al. // Bull. Russ. Acad. Sci. Phys. 2017. V. 81. No. 12. P. 1493.
- Быковский А.Ю. // Изв. РАН. Сер. физ. 2020. Т. 84. № 3. С. 377; Bykovsky A.Y. // Bull. Russ. Acad. Sci. Phys. 2020. V.84. No. 3. P. 289.
- Gisin N., Ribordy G., Tittel W., Zbinden H. // Rev. Mod. Phys. 2002. V. 74. No. 1. P. 145.
- Gol’tsman G.N., Okunev O.V., Chulkova G.M. et al. // Appl. Phys. Lett. 2001. V. 79. P. 705.
- Bouwmeester D., Ekert A.K., Zeilinger A. The physics of quantum information. Berlin: Springer, 2000. 314 p.
- Walls D.F., Milburn G.J. Quantum Optics. Berlin: Springer-Verlag, 2008. 437 p.
- Michler P. Single semiconductor quantum dots. Berlin: Springer-Verlag, 2009. 389 p.
- Michler P. Single quantum dots, fundamentals, applications and new concepts. Berlin: Springer-Verlag, 2003. 347 p.
- Wang Z.M. Self-assembled quantum dots. N.Y.: Springer Science+Business Media, 2008. 463 p.
- Michalzik R. VCSELs: fundamentals, technology and applications of vertical-cavity surface-emitting lasers. Berlin: Springer-Verlag, 2013. 558 p.
- Wilsmen C.W., Temkin H., Coldren L. Vertical-cavity surface-emitting lasers: design, fabrication, characterization and application. Cambridge University Press, 1999. 455 p.
- Cheng J., Dutta N.K. Vertical-cavity surface-emitting lasers: technology and applications. Amsterdam: Gordon and Breach Science Publishers, 2000. 323 p.
- Li H.E., Iga K. Vertical-cavity surface-emitting lasers devices. Berlin: Springer Verlag, 2002. 386 p.
- Kitching J. // Appl. Phys. Rev. 2018. V. 5. Art. No. 031302.
- Vanier J. // Appl. Phys. B. 2005. V. 81. No. 4. P. 421.
- Knappe S., Schwindt P.D.D., Shah V. et al. // Opt. Express. 2005. V. 13. No. 4. P. 1249.
- Gruet F., Al-Samaneh A., Kroemer E. et al. // Opt. Express. 2013. V. 21. No. 5. P. 5781.
- Tan B., Tian Y., Lin H. et al. // Optics Lett. 2015. V. 40. No. 16. P. 3703.
- Kroemer E., Rutkowski J., Maurice V. et al. // Appl. Optics. 2016. V. 55. No. 31. P. 8839.
- Скворцов М.Н., Игнатович С.М., Вишняков В.И. и др. // Квант. электрон. 2020. Т. 50. № 6. С. 576; Skvortsov M.N., Ignatovich S.M., Vishnyakov V.I. et al. // Quantum. Electron. 2020. V. 50. No. 6. P. 576.
- Петрушков М.О., Путято М.А., Емельянов Е.А. и др. Способ легирования цинком подложек или слоев фосфида индия. Патент РФ № 2686523, кл. H01L 21/223 (2006.01). 2019.
- Чистохин И.Б., Путято М.А., Преображенский В.В. и др. Лавинный фотодиод и способ его изготовления. Патент № RU2769749, кл. H01L 31/107 (2006.01), H01L 31/18 (2006.01), B82Y20/00 (2011.01), B82Y40/00 (2011.01) 2022.
- http://www.micro-photon-devices.com
- Гайслер В.А., Деребезов И.А., Гайслер А.В. и др. // Письма в ЖЭТФ. 2017. Т. 105. № 2. С. 93; Gaisler A.V., Derebezov I. A., Gaisler V. A. et al. // JETP Lett. 2017. V. 105. No. 2. P. 103.
Supplementary files
