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Raman scattering in ferromagnetic Ge1−xMnx nanowires
- Authors: Zaitsev S.V1
-
Affiliations:
- Osipyan Institute of Solid State Physics of the Russian Academy of Sciences
- Issue: Vol 89, No 2 (2025)
- Pages: 290–293
- Section: New Materials and Technologies for Security Systems
- URL: https://journal-vniispk.ru/0367-6765/article/view/296644
- DOI: https://doi.org/10.31857/S0367676525020227
- EDN: https://elibrary.ru/DTLGTZ
- ID: 296644
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Abstract
The temperature dependence of Raman scattering is investigated in nanowires of a dilute magnetic semiconductor Ge0.99Mn0.01. It was found that with increasing temperature, a red shift (“softening”) of the optical LO-phonon line occurs at T ≈ 25 K. The observed behaviour correlates with the data of the electron paramagnetic resonance of mobile charge carriers and indicates a strong interaction of holes with the phonon and magnetic subsystems.
About the authors
S. V Zaitsev
Osipyan Institute of Solid State Physics of the Russian Academy of Sciences
Email: szaitsev@issp.ac.ru
Chernogolovka, Russia
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