Мақаланы E-mail арқылы жіберу Self-sustaining conducting state and bipolar ionizing Gunn domains in pulse avalanche GaAs diodes
- Авторлар: Rozhkov А.V.1, Ivanov M.S.1, Rodin P.B.1
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Мекемелер:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Шығарылым: Том 87, № 6 (2023)
- Беттер: 873-878
- Бөлім: Articles
- URL: https://journal-vniispk.ru/0367-6765/article/view/135412
- DOI: https://doi.org/10.31857/S036767652370151X
- EDN: https://elibrary.ru/VMNICK
- ID: 135412
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Тек жазылушылар үшін
Аннотация
Domain instability in nonequilibrium electron-hole plasma leads to the formation of narrow moving regions of the ionizing electric field—collapsing Gunn domains. In pulse power electronics devices based on gallium arsenide, impact ionization in collapsing domains acts as an efficient mechanism for the generation of nonequilibrium carriers at low voltages and weak average electric fields.
Авторлар туралы
А. Rozhkov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
M. Ivanov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
P. Rodin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
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