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Self-sustaining conducting state and bipolar ionizing Gunn domains in pulse avalanche GaAs diodes
- Authors: Rozhkov А.V.1, Ivanov M.S.1, Rodin P.B.1
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Affiliations:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- Issue: Vol 87, No 6 (2023)
- Pages: 873-878
- Section: Articles
- URL: https://journal-vniispk.ru/0367-6765/article/view/135412
- DOI: https://doi.org/10.31857/S036767652370151X
- EDN: https://elibrary.ru/VMNICK
- ID: 135412
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Abstract
Domain instability in nonequilibrium electron-hole plasma leads to the formation of narrow moving regions of the ionizing electric field—collapsing Gunn domains. In pulse power electronics devices based on gallium arsenide, impact ionization in collapsing domains acts as an efficient mechanism for the generation of nonequilibrium carriers at low voltages and weak average electric fields.
About the authors
А. V. Rozhkov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
M. S. Ivanov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
P. B. Rodin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Author for correspondence.
Email: rodin@mail.ioffe.ru
Russia, 194021, St. Petersburg
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