Dielectric and thermal properties of potassium nitrate–carbon nanotubes composites

A. Yu. Milinskiy; Милинский А. Ю.; I. A. Chernechkin; Чернечкин И. А.; S. V. Baryshnikov; Барышников С. В.

doi:10.31857/S0367676523702356

Dielectric and thermal properties of potassium nitrate–carbon nanotubes composites

Авторлар: Milinskiy A.Y.¹, Chernechkin I.A.¹^,2, Baryshnikov S.V.¹^,2
Мекемелер:
1. Blagoveshchensk State Pedagogical University
2. Amur State University
Шығарылым: Том 87, № 9 (2023)
Беттер: 1337-1342
Бөлім: Articles
URL: https://journal-vniispk.ru/0367-6765/article/view/135494
DOI: https://doi.org/10.31857/S0367676523702356
EDN: https://elibrary.ru/OLQTBL
ID: 135494

Дәйексөз келтіру

Толық мәтін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The results of a study of composites obtained by mixing potassium nitrate and carbon nanotubes are discussed. It has been shown that the effects of the interaction of the composite components lead to the expansion of the temperature range of the existence of the ferroelectric phase of potassium nitrate from 22 K for KNO₃ to 38 K for a composite with a carbon nanotubes content of 2.0 vol % percent.

Авторлар туралы

A. Milinskiy

Blagoveshchensk State Pedagogical University

Хат алмасуға жауапты Автор.
Email: a.milinskiy@mail.ru
Russia, 675004, Blagoveshchensk

I. Chernechkin

Blagoveshchensk State Pedagogical University; Amur State University

Email: a.milinskiy@mail.ru
Russia, 675004, Blagoveshchensk; Russia, 675027, Blagoveshchensk

S. Baryshnikov

Blagoveshchensk State Pedagogical University; Amur State University

Email: a.milinskiy@mail.ru
Russia, 675004, Blagoveshchensk; Russia, 675027, Blagoveshchensk

Әдебиет тізімі

Yanga L., Konga X., Lib F. et al. // Progr. Mater. Sci. 2019. V. 102. P. 72.
Shkuratov S. I., Lynch C. S. // J. Materiomics. 2022. V. 8. P. 739.
Huang X., Jiang P., Xie L. // Appl. Phys. Lett. 2009. V. 95. No. 24. Art. No. 242901.
Fan B., Zhou M., Zhang C. et al. // Mater. Res. Express. 2019. V. 6. Art. No. 075071.
Zhang Q.M., Li H.F., Poh M. et al. // Nature. 2002. V. 419. P. 284.
Верховская К.А., Ларюшкин А.С., Савельев В.В. и др. // ЖТФ. 2014. Т. 84. № 8. С. 61; Verkhovskaya K.A., Laryushkin A.S., Savel’ev V.V. et al. // Tech. Phys. 2014. V. 84. No. 8. P. 122.
Nguyen H.T. // Appl. Phys. A. 2022. V. 128. P. 1032.
Chen A., Chernow F. // Phys. Rev. 1967. V. 154. P. 493.
Deshpande V.V., Karkhanavala M.D., Rao. U.R.K. // J. Therm. Analyt. Calorim. 1974. V. 6. P. 613.
Елецкий А.В. // УФН. 2002. Т. 172. № 4. С. 401; Eletskii A.V. // Phys. Usp. 2002. V. 45. P. 369.
Милинский А.Ю., Барышников С.В., Стукова Е.В. и др. // ФТТ. 2021. Т. 63. № 6. С. 767; Milinskii A.Yu., Baryshnikov S.V., Stukova E.V. et al. // Phys. Solid State. 2021. V. 63. P. 872.
Yanga Q., Caob J., Zhoua Y. et al. // Acta Materialia. 2016. V. 112. P. 216.
Fridkin V.M. Ferroelectric semiconductors. N.Y.: Plenum Publishing Corporation, 1980.
Iwamoto M. / In: Encyclopedia of nanotechnology. Springer, 2012.