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Magnetoresistance of a HgTe/CdHgTe Double Quantum Well in an In-Plane Magnetic Field
- Authors: Yakunin M.V.1, Aleshkin V.Y.2, Neverov V.N.1, Popov M.R.1, Mikhaylov N.N.3, Dvoretskiy S.A.3
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Affiliations:
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 118, No 11-12 (12) (2023)
- Pages: 896-901
- Section: Articles
- URL: https://journal-vniispk.ru/0370-274X/article/view/247007
- DOI: https://doi.org/10.31857/S1234567823240059
- EDN: https://elibrary.ru/NLQIZC
- ID: 247007
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Abstract
A magnetic field parallel to the layers of a double quantum well with conventional semiconductor constituents
leads to a relative shift of the conduction band spectra of the constituent layers along the wave vector perpendicular
to the field. If the states of the layers are tunnel-coupled, a tunneling gap is formed at the intersection
of the single-layer spectra and is shifted upward with increasing field. This leads to striking features in the
magnetoresistance caused by intersections of the Fermi level with the edges of the tunneling gap. Similar
studies of transformations of the spectrum of the double quantum well in a HgTe/CdHgTe heterosystem,
which has a p-type conductivity and HgTe layers with a gapless inverse energy spectrum, are reported in this
work. Our experiments and corresponding calculations in the eight-band kp approach indicate that the evolution
of the magnetoresistance with the variation of the in-plane field here has a much more complex and
diverse character depending qualitatively on the thickness of the layers.
About the authors
M. V. Yakunin
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: yakunin@imp.uran.ru
Yekaterinburg, 620219 Russia
V. Ya. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: yakunin@imp.uran.ru
Afonino village, Nizhny Novgorod region, 603087 Russia
V. N. Neverov
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: yakunin@imp.uran.ru
Yekaterinburg, 620219 Russia
M. R. Popov
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: yakunin@imp.uran.ru
Yekaterinburg, 620219 Russia
N. N. Mikhaylov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: yakunin@imp.uran.ru
Novosibirsk, 630090 Russia
S. A. Dvoretskiy
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: yakunin@imp.uran.ru
Novosibirsk, 630090 Russia
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