Transport Properties of the Magnetic Topological Insulators Family (MnBi2Te4)(Bi2Te3)m (m = 0, 1, …, 6)

V. N. Zverev; Зверев В. Н.; N. A. Abdullaev; Абдуллаев Н. А.; Z. S. Aliev; Алиев З. С.; I. R. Amiraslanov; Амирасланов И. Р.; M. M. Otrokov; Отроков М. М.; N. T. Mamedov; Мамедов Н. Т.; E. V. Chulkov; Чулков Е. В.

doi:10.31857/S1234567823240060

Transport Properties of the Magnetic Topological Insulators Family (MnBi2Te4)(Bi2Te3)m (m = 0, 1, …, 6)

作者: Zverev V.N.¹, Abdullaev N.A.², Aliev Z.S.², Amiraslanov I.R.², Otrokov M.M.³^,4, Mamedov N.T.², Chulkov E.V.⁵^,6
隶属关系:
1. Osipyan Institute of Solid State Physics, Russian Academy of Sciences
2. Baku State University
3. Centro Mixto CSIC-UPV/EHU
4. IKERBASQUE, Basque Foundation for Science
5. Universidad del Pa´ıs Vasco UPV/EHU
6. St. Petersburg State University
期: 卷 118, 编号 11-12 (12) (2023)
页面: 902-907
栏目: Articles
URL: https://journal-vniispk.ru/0370-274X/article/view/247008
DOI: https://doi.org/10.31857/S1234567823240060
EDN: https://elibrary.ru/NLTVKH
ID: 247008

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

Systematic studies of magneto-transport properties of the whole (MnBi₂Te₄)(Bi₂Te₃)_m family of magnetic topological insulators ( $m = 0, 1, . . ., 6)$ have been carried out. Temperature dependences of the resistivity, magnetoresistance and the Hall effect at low temperatures have been studied. When m increases, i.e., when the separation between 2D MnBi₂Te₄ magnetic layers becomes larger, the transition from antiferromagnetic to ferromagnetic state takes place. We have found that ferromagnetic state survives even in the samples with $m = 6$ , when 2D magnets are separated by six non-magnetic Bi₂Te₃ blocks.

参考

M. M. Otrokov, I. I. Klimovskikh, H. Bentmann et al. (Collaboration), Nature 576(19/26), 416 (2019).
Y. Gong, J. Guo, J. Li et al. (Collaboration), Chin. Phys. Lett. 36, 076801 (2019).
D. Zhang, M. Shi, T. Zhu, D. Xing, H. Zhang, and J. Wang, Phys. Rev. Lett. 122, 206401 (2019).
J. Li, Y. Li, S. Du, Z. Wang, B.-L. Gu, and Y. Xu, Sci. Adv. 5, eaaw5685 (2019).
M. M. Otrokov, I. P.Rusinov, M. Blanco-Rey, M. Ho mann, A. Yu. Vyazovskaya, S. V. Eremeev, A. Ernst, P. M. Echenique, A. Arnau, and E. V. Chulkov, Phys. Rev. Lett. 122, 107202 (2019).
I. I. Klimovskikh, M. M. Otrokov, D. Estyunin et al. (Collaboration), npg Quantum Mater. 5, 54 (2020).
Z. A. Jahangirli, E. H. Alizade, Z. S. Aliev, M. M. Otrokov, N. A. Ismayilova, S. N. Mammadov, I. R. Amiraslanov, N. T. Mamedov, G. S. Orudjev, M. B. Babanly, A. M. Shikin, and E. V. Chulkov, J. Vac. Sci. Technol. B 37, 062910 (2019).
Z. S. Aliev, I. R. Amiraslanov, D. I. Nasonova, A. V. Shevelkov, N. A. Abdullayev, Z. A. Jahangirli, E. N. Orujlu, M. M. Otrokov, N. T. Mamedov, M. B. Babanly, and E. V. Chulkov, J. Alloys Compd. 789, 443 (2019).
L. Ding, C. Hu, E. Feng, C. Jiang, I. A. Kibalin, A. Gukasov, M. F. Chi, N. Ni, and H. Cao, J. Phys. D: Appl. Phys. 54, 174003 (2021).
J. Z. Wu, F. Liu, M. Sasase, K. Ienaga, Y. Obata, R. Yukawa, K. Horiba, H. Kumigashira, S. Okuma, T. Inoshita, and H. Hosono, Sci. Adv. 5, eaax9989 (2019).
N. A. Abdullaev, I. R. Amiraslanov, Z. S. Aliev, Z. A. Jahangirli, I. Yu. Sklyadneva, E. G. Alizade, Y. N. Aliyeva, M. M. Otrokov, V. N. Zverev, N. T. Mamedov, and E. V. Chulkov, JETP Lett. 115, 749 (2022).
F. Fei, S. Zhang, M. Zhang, S. A. Shah, F. Song, X. Wang, and B. Wang, Adv. Mater. 32, 1904593 (2019).
C. Liu, Y. Wang, H. Li, Y. Wu, H. Li, Y. Wu, Y. Li, J. Li, K. He, Y. Xu, J. Zhang, and Y. Wang, Nat. Mater. 19, 522 (2020).
M. Z. Shi, B. Lei, C. S. Zhu, D. H. Ma, J. H. Cui, Z. L. Sun, J. J. Ying, and X. H. Chen, Phys. Rev. B 100, 155144 (2019).
J.-Q. Yan, Y. H. Liu, D. Parker, Y. Wu, A. A. Aczel, M. Matsuda, M. A. McGuire, and B. C. Sales, Phys. Rev. Materials 4, 054202 (2020).
C. Hu, L. Ding, K. N. Gordon et al. (Collaboration), Sci. Adv. 6, eaba4275 (2020).
I. R. Amiraslanov, Z. S. Aliev, P. A. Askerova, E. H. Alizade, Y. N. Aliyeva, N. A. Abdullayev, Z. A. Jahangirli, M. M. Otrokov, N. T. Mamedov, and E. V. Chulkov, Phys. Rev. B 106, 184108 (2022).
A.Ruiz, N. P. Breznay, M. Li, R. D. McDonald, and R. J. McQueeney, Phys. Rev. B 103, 184429 (2021).
J. Cai, D. Ovchinnikov, Z. Fei, M. He, T. Song, Z. Lin, C. Wang, D. Cobden, J.-H. Chu, Y.-T. Cui, C.-Z. Chang, D. Xiao, J. Yan, and X. Xu, Nat.Commun. 13, 1668 (2022).
J.-Q. Yan, Q. Zhang, T. Heitmann, Z. Huang, K. Y. Chen, J.-G. Cheng, W. Wu, D. Vaknin, B. C. Sales, and R. J. McQueeney, Phys. Rev. Materials 3(6), 064202 (2019).
A. Tan, V. Labrasherie, N. Kunchur, A. U. B. Wolter, J. Cornejo, J. Dufouleur, B. Bu�chner, A. Isaeva, and R. Giraud, Phys. Rev. Lett. 124, 197201 (2020).
J. Shao, Y. Liu, M. Zeng et al. (Collaboration), Nano Lett. 21, 5874 (2021).
A. Alfonsov, K. Mehlawat, A. Zeugner, A. Isaeva, B. Bu�chner, and V. Kataev, Phys. Rev. B 104, 195139 (2021).
R. Lu, H. Sun, S. Kumar et al. (Collaboration), Phys. Rev. X 11, 011039 (2021).
S. V. Eremeev, I. P.Rusinov, Yu. M. Koroteev, A. Yu. Vyazovskaya, M. Ho mann, P. M. Echenique, A. Ernst, M. M. Otrokov, and E. V. Chulkov, J. Phys. Chem. Lett. 12, 4268 (2021).
M. Ahlberg, M. Marcellini, A. Taroni et al. (Collaboration), Phys. Rev. B 81, 214429 (2010).
C. Yan, Y. Zhu, L. Miao et al. (Collaboration), Nano Lett. 22, 9815 (2022).
A.-V. Tcakaev, B.Rubrecht, J. I. Facio et al. (Collaboration), Adv. Sci. 10, 2203239 (2023).

补充文件

附件文件

动作

1. JATS XML

下载

用户名
密码
记住我

忘记您的密码?	注册

用户名
密码
记住我

忘记您的密码?	注册

卷 121, 编号 9-10 (2025)

Transport Properties of the Magnetic Topological Insulators Family (MnBi2Te4)(Bi2Te3)m (m = 0, 1, …, 6)

全文:

详细

作者简介

V. Zverev

N. Abdullaev

Z. Aliev

I. Amiraslanov

M. Otrokov

N. Mamedov

E. Chulkov

参考

补充文件