Spin-valve effect for spin-polarized surface states in topological semimetals

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Abstract

We experimentally investigate magnetoresistance of a single GeTe–Ni junction between the α-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance dV/dI peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd3As2, and strictly flat dV/dI(H) magnetoresistance curves for the reference GeTe-Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal α-GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions.

About the authors

A. A. Avakyants

Institute of Solid State Physics of the Russian Academy of Sciences

Email: dev@issp.ac.ru
Chernogolovka, Russia

V. D. Esin

Institute of Solid State Physics of the Russian Academy of Sciences

Email: dev@issp.ac.ru
Chernogolovka, Russia

D. Yu. Kazmin

Institute of Solid State Physics of the Russian Academy of Sciences

Email: dev@issp.ac.ru
Chernogolovka, Russia

N. N. Orlova

Institute of Solid State Physics of the Russian Academy of Sciences

Email: dev@issp.ac.ru
Chernogolovka, Russia

A. V. Timonina

Institute of Solid State Physics of the Russian Academy of Sciences

Email: dev@issp.ac.ru
Chernogolovka, Russia

N. N. Kolesnikov

Institute of Solid State Physics of the Russian Academy of Sciences

Author for correspondence.
Email: dev@issp.ac.ru
Chernogolovka, Russia

E. V. Deviatov

Institute of Solid State Physics of the Russian Academy of Sciences

Email: dev@issp.ac.ru
Chernogolovka, Russia

References

  1. D. A. Pshenay-Severin, Y. V. Ivanov, A. A. Burkov, and A. T. Burkov, J. Phys. Condens. Matter 30, 135501 (2018).
  2. S.-Y. Xu, I. Belopolski, D. S. Sanchez et al. (Collaboration), Phys. Rev. Lett. 116, 096801 (2016).
  3. B. Dieny, V. S. Speriosu, S. S. P. Parkin, B. A. Gurney, D. R. Wilhoit, and D. Mauri, Phys. Rev. B 43, 1297 (1991).
  4. R. Q. Zhang, J. Su, J. W. Cai, G. Y. Shi, F. Li, L. Y. Liao, F. Pan, and C. Song, Appl. Phys. Lett. 114, 092404 (2019).
  5. V. D. Esin, D. N. Borisenko, A. V. Timonina, N. N. Kolesnikov, and E. V. Deviatov, Phys. Rev. B 101, 155309 (2020).
  6. O. O. Shvetsov, V. D. Esin, A. V. Timonina, N. N. Kolesnikov, and E. V. Deviatov, Europhys. Lett. 127, 57002 (2019).
  7. D. Di Sante, P. Barone, R. Bertacco, and S. Picozzi, Adv. Mater. 25, 509 (2013).
  8. J. Krempasky´, L. Nicola¨i, M. Gmitra, H. Chen, M. Fanciulli, E. B. Guedes, M. Caputo, M. Radovi´c, V. V. Volobuev, O. Caha, G. Springholz, J. Min´ar, and J. H. Dil, Phys. Rev. Lett. 126, 206403 (2021).
  9. G. Kremer, T. Jaouen, B. Salzmann, L. Nicola¨i, M. Rumo, C. W. Nicholson, B. Hildebrand, J. H. Dil, J. Min´ar, G. Springholz, J. Krempasky´, and C. Monney, Phys. Rev. Research 2, 033115 (2020).

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