Determination of Concentration of Organic Contaminants on a Silicon Dioxide Surface by Tribometry

Abstract

Features of the mechanism of pointwise tribometric interaction of silicon dioxide substrates in estimation of the cleanliness of their surfaces are investigated. It is shown that the lower the speed of the probe substrate, the greater the sensitivity of the tribometric system to variations in the concentration of the surface electronic states. Measurement of the acceleration of a probe substrate after it starts to move in the time interval 0 ≤ t ≤ 0.012 sec is suggested. This will make it possible to reduce the error in the degree of cleanliness of surfaces down to 11%.