Email this article Modeling 2T937 Bipolar Transistors Based on Experimental Static and Frequency Characteristics
- Authors: Khvalin A.L.1
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Affiliations:
- Saratov National Research State University
- Issue: Vol 61, No 8 (2018)
- Pages: 831-835
- Section: Article
- URL: https://journal-vniispk.ru/0543-1972/article/view/246574
- DOI: https://doi.org/10.1007/s11018-018-1510-6
- ID: 246574
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Abstract
A method for modeling the 2T937 transistor is described. Calculations of its static and frequency characteristics are presented and the error in the model is assessed. Optimized parameters of a Gummel–Poon model are taken as the basis for modeling the transistor. It is shown that the model developed here can be used in computer aided design systems as a component base for the development of transistor devices.
About the authors
A. L. Khvalin
Saratov National Research State University
Author for correspondence.
Email: Khvalin63@mail.ru
Russian Federation, Saratov
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