Analysis and Synthesis of Methods for Measuring the S-Parameters of Microwave Transistors

Abstract

Two-signal and modified two-signal methods for measuring the S-parameters of transistors are examined, along with a method developed for adequate measurement based on these methods. The uncertainty of the last two methods is eliminated. The methods are implemented using a simulator-analyzer for the amplifiers and microwave self-oscillators in measurement channels of the simulator-analyzer that are matched and unmatched to the loads. The range of applicability and the interrelationship of these methods are studied and their advantages and disadvantages are pointed out.