Email this article Measurement of the Energy Resolution of Silicon X-Ray Detectors Using Absorption Edge Spectra
- Authors: Osadchii S.M.1, Petukhov A.A.1, Dunin V.B.2
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Affiliations:
- All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI)
- Joint Institute for Nuclear Research (JINR)
- Issue: Vol 62, No 5 (2019)
- Pages: 465-469
- Section: Ionizing Radiation Measurements
- URL: https://journal-vniispk.ru/0543-1972/article/view/246730
- DOI: https://doi.org/10.1007/s11018-019-01646-6
- ID: 246730
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Abstract
A silicon detector with a longitudinal silicon wafer has been developed. x-Ray spectra at the K-absorption edges of Au, Pb, and Bi are used to measure its energy resolution. The results are compared with measurements based on x-rays from a 241Am gamma-ray source. The dependence of the energy resolution of the detector on the noise of a charge-sensitive amplifier and on statistical fluctuations in pair production of carriers in the silicon is calculated.
About the authors
S. M. Osadchii
All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI)
Author for correspondence.
Email: osm@vniiftri.ru
Russian Federation, Moscow Region, Mendeleevo
A. A. Petukhov
All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI)
Email: osm@vniiftri.ru
Russian Federation, Moscow Region, Mendeleevo
V. B. Dunin
Joint Institute for Nuclear Research (JINR)
Email: osm@vniiftri.ru
Russian Federation, Moscow Region, Dubna
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