Formation of NiO/YSZ functional anode layers of solid oxide fuel cells by magnetron sputtering
- 作者: Ionov I.V.1,2, Solov’ev A.A.1,2, Lebedinskii A.M.2, Shipilova A.V.1,2, Smolyanskii E.A.2, Koval’chuk A.N.2, Lauk A.L.2
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隶属关系:
- Institute of High Current Electronics, Siberian Branch
- Tomsk Polytechnic University
- 期: 卷 53, 编号 6 (2017)
- 页面: 670-676
- 栏目: Article
- URL: https://journal-vniispk.ru/1023-1935/article/view/188828
- DOI: https://doi.org/10.1134/S1023193517060064
- ID: 188828
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详细
The decrease in the polarization resistance of the anode of solid-oxide fuel cells (SOFCs) due to the formation of an additional NiO/(ZrO2 + 10 mol % Y2O3) (YSZ) functional layer was studied. NiO/YSZ films with different NiO contents were deposited by reactive magnetron sputtering of Ni and Zr–Y targets. The elemental and phase composition of the films was adjusted by regulating oxygen flow rate during the sputtering. The resulting films were studied by scanning electron microscopy and X-ray diffractometry. Comparative tests of planar SOFCs with a NiO/YSZ anode support, NiO/YSZ functional nanostructured anode layer, YSZ electrolyte, and La0.6Sr0.4Co0.2Fe0.8O3/Ce0.9Gd0.1O2 (LSCF/CGO) cathode were performed. It was shown that the formation of a NiO/YSZ functional nanostructured anode leads to a 15–25% increase in the maximum power density of fuel cells in the working temperature range 500–800°C. The NiO/YSZ nanostructured anode layers lead not only to a reduction of the polarization resistance of the anode, but also to the formation of denser electrolyte films during subsequent magnetron sputtering of electrolyte.
作者简介
I. Ionov
Institute of High Current Electronics, Siberian Branch; Tomsk Polytechnic University
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634055; Tomsk, 634050
A. Solov’ev
Institute of High Current Electronics, Siberian Branch; Tomsk Polytechnic University
编辑信件的主要联系方式.
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634055; Tomsk, 634050
A. Lebedinskii
Tomsk Polytechnic University
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634050
A. Shipilova
Institute of High Current Electronics, Siberian Branch; Tomsk Polytechnic University
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634055; Tomsk, 634050
E. Smolyanskii
Tomsk Polytechnic University
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634050
A. Koval’chuk
Tomsk Polytechnic University
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634050
A. Lauk
Tomsk Polytechnic University
Email: andrewsol@mail.ru
俄罗斯联邦, Tomsk, 634050
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