Email this article Backscattered electron imaging of microand nanostructures: 4. Structures with a trapezoidal profile and large side-wall inclination angles
- Authors: Novikov Y.A.1,2
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Affiliations:
- A.M. Prokhorov General Physics Institute
- National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
- Issue: Vol 10, No 1 (2016)
- Pages: 221-230
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/188158
- DOI: https://doi.org/10.1134/S1027451016010286
- ID: 188158
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Abstract
The results of investigating the imaging of grooves in silicon with a trapezoidal profile and large side-wall inclination angles, which are obtained using a scanning electron microscope operating in the back-scattered-electron collection mode, are presented. Only two among the four known imaging mechanisms is demonstrated to provide contributions to the image-formation process. The lack of contributions from two other mechanisms is explained.
About the authors
Yu. A. Novikov
A.M. Prokhorov General Physics Institute; National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
Author for correspondence.
Email: nya@kapella.gpi.ru
Russian Federation, Moscow, 119991; Moscow, 115409
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