Email this article Cathodoluminescence studies of exciton diffusion in gallium nitride
- Authors: Polyakov A.N.1, Stepovich M.A.1,2, Turtin D.V.2
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Affiliations:
- Tsiolkovsky Kaluga State University
- Plekhanov Russian University of Economics
- Issue: Vol 10, No 3 (2016)
- Pages: 563-566
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/188898
- DOI: https://doi.org/10.1134/S1027451016030149
- ID: 188898
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Abstract
Gallium nitride is used as an example to show the possibilities of the application of a developed threedimensional mathematical model in the cathodoluminescence studies of direct-gap semiconductor materials using the time-of-flight procedure for obtaining quantitative information on their properties. The values of the diffusion coefficient in gallium nitride are determined from the results of its experimental studies.
About the authors
A. N. Polyakov
Tsiolkovsky Kaluga State University
Author for correspondence.
Email: Andrei-polyakov@mail.ru
Russian Federation, Kaluga, 248023
M. A. Stepovich
Tsiolkovsky Kaluga State University; Plekhanov Russian University of Economics
Email: Andrei-polyakov@mail.ru
Russian Federation, Kaluga, 248023; Ivanovo Branch, Ivanovo, 153025
D. V. Turtin
Plekhanov Russian University of Economics
Email: Andrei-polyakov@mail.ru
Russian Federation, Ivanovo Branch, Ivanovo, 153025
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