Email this article Analysis of the composition of graphene-oxide films using a backscattered H+ ion beam
- Authors: Mokrushin A.D.1, Egorov E.V.1, Smirnov V.A.2
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Affiliations:
- Institute of Microelectronic Technology and High Purity Materials
- Institute for Problems of Chemical Physics
- Issue: Vol 10, No 3 (2016)
- Pages: 637-640
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/189073
- DOI: https://doi.org/10.1134/S1027451016030290
- ID: 189073
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Abstract
The O/C atomic ratios in films of oxidized and partially reduced graphene oxide are determined via the Rutherford backscattering of H+ ions. In addition, the conductivity σ is measured. It is established that the reduction noticeably decreases the О/С ratio and increases σ by a few orders of magnitude. We demonstrate for the first time the efficiency of Rutherford backscattering in studying graphene-type objects.
About the authors
A. D. Mokrushin
Institute of Microelectronic Technology and High Purity Materials
Author for correspondence.
Email: mad@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
E. V. Egorov
Institute of Microelectronic Technology and High Purity Materials
Email: mad@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
V. A. Smirnov
Institute for Problems of Chemical Physics
Email: mad@iptm.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
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