Email this article High resolution X-ray studies of porous PbTe layers on silicon substrates
- Authors: Mamontov A.I.1, Petrakov A.P.2
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Affiliations:
- Vyatka State University
- Syktyvkar State University
- Issue: Vol 11, No 3 (2017)
- Pages: 538-543
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/193003
- DOI: https://doi.org/10.1134/S1027451017030107
- ID: 193003
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Abstract
The structure of PbTe films after anodic electrochemical etching in Norr electrolyte is studied by high resolution X-ray diffractometry and reflectometry. Lattice defects before and after etching are estimated. The quantitative parameters of the pores are determined. The advantage of the complex application of high resolution X-ray methods for the determination of the real structure of lead-telluride porous films is shown.
About the authors
A. I. Mamontov
Vyatka State University
Author for correspondence.
Email: snowchek@mail.ru
Russian Federation, Kirov, 610000
A. P. Petrakov
Syktyvkar State University
Email: snowchek@mail.ru
Russian Federation, Syktyvkar, 167001
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