Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation


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The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.

作者简介

A. Borisov

Moscow Aviation Institute (National Research University)

编辑信件的主要联系方式.
Email: anatoly_borisov@mail.ru
俄罗斯联邦, Moscow, 125993

V. Kazakov

Moscow Aviation Institute (National Research University); State Scientific Centre Keldysh Research Center

Email: anatoly_borisov@mail.ru
俄罗斯联邦, Moscow, 125993; Moscow, 125438

E. Mashkova

Skobeltsyn Institute of Nuclear Physics

Email: anatoly_borisov@mail.ru
俄罗斯联邦, Moscow, 119991

M. Ovchinnikov

Skobeltsyn Institute of Nuclear Physics

Email: anatoly_borisov@mail.ru
俄罗斯联邦, Moscow, 119991

Yu. Palyanov

Sobolev Institute of Geology and Mineralogy, Siberian Branch

Email: anatoly_borisov@mail.ru
俄罗斯联邦, Novosibirsk, 630090

V. Popov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: anatoly_borisov@mail.ru
俄罗斯联邦, Novosibirsk, 630090

E. Shmytkova

State Scientific Centre Keldysh Research Center

Email: anatoly_borisov@mail.ru
俄罗斯联邦, Moscow, 125438

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