On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films


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Abstract

The effect of preliminary low-energy (~1 keV) and low-dose (~1012–1014 cm–2) ion bombardment on the initial stages of growth of Si films on a CaF2/Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.

About the authors

B. E. Umirzakov

Tashkent State Technical University

Author for correspondence.
Email: ftmet@rambler.ru
Uzbekistan, Tashkent, 100095

S. B. Donaev

Tashkent State Technical University

Email: ftmet@rambler.ru
Uzbekistan, Tashkent, 100095

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