On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films
- Authors: Umirzakov B.E.1, Donaev S.B.1
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Affiliations:
- Tashkent State Technical University
- Issue: Vol 11, No 4 (2017)
- Pages: 746-748
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/193733
- DOI: https://doi.org/10.1134/S1027451017040139
- ID: 193733
Cite item
Abstract
The effect of preliminary low-energy (~1 keV) and low-dose (~1012–1014 cm–2) ion bombardment on the initial stages of growth of Si films on a CaF2/Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.
About the authors
B. E. Umirzakov
Tashkent State Technical University
Author for correspondence.
Email: ftmet@rambler.ru
Uzbekistan, Tashkent, 100095
S. B. Donaev
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbekistan, Tashkent, 100095
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