Molecular dynamics simulation of the penetration of silicon by hypersonic waves generated in native silicon oxide under irradiation

Abstract

The penetration of hypersonic waves generated in native silicon oxide under the action of an alternating electric field in the case of the illumination or ion irradiation of silicon is simulated by molecular dynamics. It is found that compression leads to an increase in the velocity of the hypersonic wave and that the attenuation of the wave in the compression region of the edge dislocation is slower than in unstrained silicon. These results are consistent with previous analytical estimates made for explanation of the long-range effect.