Email this article Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons
- Authors: Lebedev A.A.1, Davydovskaya K.S.1, Strelchuk A.M.1, Kozlovski V.V.2
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg State Polytechnic University
- Issue: Vol 11, No 5 (2017)
- Pages: 924-926
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/194062
- DOI: https://doi.org/10.1134/S102745101705010X
- ID: 194062
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Abstract
Degradation of the parameters of 4H-SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm–1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~1017 cm–2. The radiation resistance of SiC Schottky diodes is found to be much greater than that of Si p–i–n-diodes with the same breakdown voltage.
About the authors
A. A. Lebedev
Ioffe Physical–Technical Institute
Author for correspondence.
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
K. S. Davydovskaya
Ioffe Physical–Technical Institute
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. M. Strelchuk
Ioffe Physical–Technical Institute
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kozlovski
St. Petersburg State Polytechnic University
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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