Features of the Growth and Properties of Dielectric Layers and Metal−Insulator−Semiconductor Structures Obtained via the Anodic Oxidation of InAs in an Electrolyte Containing Fluorine Ions

Abstract

The fluorine-atom profiles over the dielectric-layer thickness, as well as the electrophysical parameters of metal–insulator–semiconductor structures obtained when InAs crystals are anodically oxidized under galvanostatic conditions at two anodizing current densities in an electrolyte containing fluoride ions, are investigated. The features of variations both in the fluorine-atom distribution and in the effective surfacestate charge on the InAs–layer interface, which are observed during layer growth, are discussed.