Radiation Resistance of Devices Based on SiC

Abstract

The problems of the radiation resistance of diodes for different purposes, created on the basis of lightly doped epitaxial n-4H-SiC layers with Schottky barriers and ion-doped p‒n- and n‒p junctions, are considered. The effect of irradiation with high-energy particles in a wide range of energies and masses—from electrons to Bi heavy ions—on the electrical and optical characteristics of 4H-SiC-based devices is studied. The general regularities of radiation-defect formation under irradiation with different high-energy particles are shown. The high radiation resistance of 4H-SiC is confirmed, and the possibility of increasing its radiation durability and endurance with high energies of irradiating particles and at operating temperatures of up to 400–500°C is shown.