Development of Field Alignment Methods for Electron-Вeam Lithography in the Case of X-Ray Bragg–Fresnel Lenses

Abstract

A method providing more than a tenfold improvement in the precision of exposure field alignment in electron-beam lithography is proposed. The method uses a scanning electron microscope with a standard mechanical positioning system and alignment markers produced by contact photolithography. Bragg–Fresnel lens (1–3–5 orders) with a tenfold decrease in the error of exposure field alignment through the use of mechanical stages are created via this technique.