Role of the Carbon Sublattice in n-SiС Conductivity Compensation

Abstract

The formation of radiation defects in the silicon-carbide sublattice under irradiation with 15-MeV protons and 0.9-MeV electron is analyzed. Numerical simulation is carried out, and histograms of the distribution of the energy transferred to carbon recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. Single isolated Frenkel pairs with closely located components are produced in the low-energy range. The recoil atom energy is sufficient to produce a displacement cascade in the other range. As the energy of primary knocked-out atoms increases, the average distance between genetically related Frenkel pairs increases, and as a consequence, the fraction of pairs that do not recombine under irradiation increases. The recombination radius of the Frenkel pair in the carbon sublattice is estimated.