Formation of SEM Images in the Slow Secondary Electron Mode. 1. Structures with Large Side Wall Inclinations

Abstract

The formation of images of silicon microstructures in a scanning electron microscope, operating in the modes of collecting secondary slow and backscattered electrons, is studied. An MShPS-2.0Si test object was used as the object of study. The test object consists of pitch structures (protrusion and grooves in silicon), the profile of which has a trapezoidal shape with large inclinations of the side walls. The signal of slow secondary electrons is formed in different ways for surfaces with and without a relief. At the same time, the signal of backscattered electrons is formed in the same way for surfaces with and without a relief.