Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
- 作者: Umirzakov B.E.1, Tashmukhamedova D.A.1, Rabbimov E.M.2, Sodikjanov J.S.1, Urokov A.N.1
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隶属关系:
- Tashkent State Technical University Named after Islam Karimov
- Jizzakh Polytechnical Institute
- 期: 卷 13, 编号 6 (2019)
- 页面: 1248-1251
- 栏目: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/196567
- DOI: https://doi.org/10.1134/S1027451019060557
- ID: 196567
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详细
Cd nanofilms with a thickness of 10–12 Å are obtained by bombarding a CdS surface with Ar+ ions. The obtained Cd–CdS nanofilm systems are shown to be promising for creating metal–insulator–semiconductor and semiconductor–insulator–semiconductor heterostructures and forming nanoscale barrier layers and hyperfine ohmic contacts on the semiconductor surface.
作者简介
B. Umirzakov
Tashkent State Technical University Named after Islam Karimov
编辑信件的主要联系方式.
Email: ftmet@rambler.ru
乌兹别克斯坦, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University Named after Islam Karimov
编辑信件的主要联系方式.
Email: ftmet@mail.ru
乌兹别克斯坦, Tashkent, 100095
E. Rabbimov
Jizzakh Polytechnical Institute
Email: ftmet@mail.ru
乌兹别克斯坦, Jizzakh, 130100
J. Sodikjanov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
乌兹别克斯坦, Tashkent, 100095
A. Urokov
Tashkent State Technical University Named after Islam Karimov
Email: ftmet@mail.ru
乌兹别克斯坦, Tashkent, 100095
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