Email this article Broadband Silicon Absorber of Terahertz Radiation
- Authors: Pavelyev V.S.1,2, Tukmakov K.N.1,2, Reshetnikov A.S.1,2, Tsibizov I.A.3, Kropotov G.I.3
-
Affiliations:
- Samara National Research University
- Image Processing System Institute, Russian Academy of Sciences
- Tydex, LLC
- Issue: Vol 13, No 6 (2019)
- Pages: 1302-1305
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/196594
- DOI: https://doi.org/10.1134/S1027451019060466
- ID: 196594
Cite item
Open Access
Access granted
Subscription Access
Abstract
A three-layer structure is fabricated on a low-resistance silicon substrate using plasma chemical etching. We study it experimentally and show that a substrate with such a structure can be used as an absorber of terahertz (THz) radiation in the frequency range of 0.5−2.0 THz. For this structure, absorbance in the indicated frequency range is measured to be more than 95%.
About the authors
V. S. Pavelyev
Samara National Research University; Image Processing System Institute, Russian Academy of Sciences
Author for correspondence.
Email: pavelyev10@mail.ru
Russian Federation, Samara; Samara
K. N. Tukmakov
Samara National Research University; Image Processing System Institute, Russian Academy of Sciences
Email: pavelyev10@mail.ru
Russian Federation, Samara; Samara
A. S. Reshetnikov
Samara National Research University; Image Processing System Institute, Russian Academy of Sciences
Email: pavelyev10@mail.ru
Russian Federation, Samara; Samara
I. A. Tsibizov
Tydex, LLC
Email: pavelyev10@mail.ru
Russian Federation, St. Petersburg
G. I. Kropotov
Tydex, LLC
Email: pavelyev10@mail.ru
Russian Federation, St. Petersburg
Supplementary files
